Volume, Issue, Month, Year : Vol (5), No (1/2/3/4), October, 2016
ABSTRACT
We introduce an approach for increasing density of voltage restore elements. The approach based on manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.Several required sections of the layer should be doped by diffusion or ion implantation. After that dopants and/or radiation defects should be annealed.
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